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NTMS4503N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /
V GS = 0 V, I D = 250 m A
?
28
?
31
22
?
?
V
mV/ ° C
Temperature Coefficient
T J
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 24 V
T J = 25 ° C
T J = 100 ° C
?
?
?
?
1.0
25
m A
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = $ 20 V
?
?
$ 100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain?to?Source On Resistance
V GS(TH)
V GS(TH) /T J
R DS(on)
V GS = V DS , I D = 250 m A
?
V GS = 10 V, I D = 14 A
1.0
?
?
?
?5.0
7.0
2.0
?
8.0
V
mV/ ° C
m W
V GS = 4.5 V, I D = 10 A
?
8.8
9.8
Forward Transconductance
g FS
V DS = 10 V, I D = 14 A
?
30
?
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
?
2400
?
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz, V DS = 16 V
?
?
1000
375
?
?
Total Gate Charge
Q G(TOT)
?
23
?
nC
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 16 V, I D = 10 A
?
?
?
2.0
5.0
12
?
?
?
SWITCHING CHARACTERISTICS, V GS = V (Note 5)
Turn?On Delay Time
t d(ON)
?
18.5
?
ns
Rise Time
Turn?Off Delay Time
Fall Time
tr
t d(OFF)
t f
V GS = 4.5 V, V DD = 16 V, I D = 10 A,
R G = 2.0 W
?
?
?
70
21
23
?
?
?
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
V SD
t RR
V GS = 0 V, I S = 10 A
T J = 25 ° C
T J = 125 ° C
?
?
?
0.82
0.65
48
1.2
?
?
V
ns
Charge Time
Discharge Time
T a
T b
V GS = 0 V,
d ISD /d t = 100 A/ m s,
I S = 14 A
?
?
23
25
?
?
Reverse Recovery Charge
Q RR
?
25
?
nC
4. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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